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SI4542DY vishay siliconix document number: 70666 s-56944erev. d, 23-nov-98 www.vishay.com faxback 408-970-5600 2-1 n- and p-channel 30-v (d-s) mosfet
v ds (v) r ds(on) ( ) i d (a) n - channel 30 0.025 @ v gs = 10 v 6.9 n - channel 30 0.035 @ v gs = 4.5 v 5.8 p - channel 30 0.032 @ v gs = 10 v 6.1 p - channel 30 0.045 @ v gs = 4.5 v 5.1 d 1 g 1 s 1 n-channel mosfet s 2 g 2 d 2 p-channel mosfet s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 so-8 5 6 7 8 top view 2 3 4 1
parameter symbol n-channel p-channel unit drain-source voltage v ds 30 30 v gate-source voltage v gs 20 20 v continuous drain current (t j = 150 c) a t a = 25 c i d 6.9 6.1 a continuous drain current (t j = 150 c) a t a = 70 c i d 5.5 4.9 a pulsed drain current i dm 40 40 a continuous source current (diode conduction) a i s 1.7 1.7 maximum power dissipation a t a = 25 c p d 2.0 w maximum power dissipation a t a = 70 c p d 1.3 w operating junction and storage temperature range t j , t stg 55 to 150 c parameter symbol n- or p-channel unit maximum junction-to-ambient a r thja 62.5 c/w notes a. surface mounted on fr4 board, t 10 sec.
SI4542DY vishay siliconix www.vishay.com faxback 408-970-5600 2-2 document number: 70666 s-56944erev. d, 23-nov-98

parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a n-ch 1.0 v gate threshold v oltage v gs(th) v ds = v gs , i d = 250 a p-ch 1.0 v gate - body leakage i gss v ds = 0 v , v gs = 20 v n-ch 100 na gate - body leakage i gss v ds = 0 v , v gs = 20 v p-ch 100 na zgvl dic i v ds = 30 v, v gs = 0 v n-ch 1 a zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v p-ch 1 a zero gate v oltage drain current i dss v ds = 30 v, v gs = 0 v, t j = 55 c n-ch 25 a v ds = 30 v, v gs = 0 v, t j = 55 c p-ch 25 on - state drain current a i d(on) v ds 5 v, v gs = 10 v n-ch 20 a on - state drain current a i d(on) v ds 5 v, v gs = 10 v p-ch 20 a dis os r i a v gs = 10 v, i d = 6.9 a n-ch 0.020 0.025 drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 6.1 a p-ch 0.026 0.032 drain - source on - state resistance a r ds( on ) v gs = 4.5 v, i d = 5.8 a n-ch 0.026 0.035 v gs = 4.5 v, i d = 5.1 a p-ch 0.036 0.045 forward transconductance a g fs v ds = 15 v, i d = 6.9 a n-ch 25 s forward t ransconductance a g fs v ds = 15 v, i d = 6.1 a p-ch 16 s diode forward voltage a v sd i s = 1.7 a, v gs = 0 v n-ch 1.2 v diode forward v oltage a v sd i s = 1.7 a, v gs = 0 v p-ch 1.2 v dynamic b total gate charge q g nch l n-ch 30 50 c total gate charge q g n-channel p-ch 32 50 c gate - source charge q gs n channel v ds = 15 v, v gs = 10 v, i d = 6.9 a n-ch 7.5 nc gate - source charge q gs p-channel v15vv10vi61a p-ch 7.0 nc gate - drain charge q gd v ds = 15 v, v gs = 10 v, i d = 6.1 a n-ch 3.5 gate - drain charge q gd p-ch 5.0 turn - on delay t ime t d(on) nch l n-ch 12 20 turn - on delay t ime t d(on) nch l p-ch 10 20 rise time t r n-channel v dd = 15 v, r l = 10 n-ch 10 20 rise t ime t r v dd = 15 v , r l = 10 i d 1 a, v gen = 10 v, r g = 6 p-ch 10 20 turn - of f delay time t d(off) p-channel v15vr10 n-ch 60 90 ns turn - of f delay t ime t d(off) v dd = 15 v, r l = 10 i d 1 a, v gen = 10 v, r g = 6 p-ch 55 80 ns fall time t f i d 1 a, v gen 10 v, r g 6 n-ch 15 30 fall t ime t f p-ch 25 40 source-drain rr ti t rr i f = 1.7 a, di/dt = 100 a/ s n-ch 50 90 reverse recovery time t rr i f = 1.7 a, di/dt = 100 a/ s p-ch 50 90 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing.
SI4542DY vishay siliconix document number: 70666 s-56944erev. d, 23-nov-98 www.vishay.com faxback 408-970-5600 2-3

0 10 20 30 40 012345 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 0.6 0.8 1.0 1.2 1.4 1.6 50 25 0 25 50 75 100 125 150 0 8 16 24 32 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 2 4 6 8 10 0 6 12 18 24 30 0 0.01 0.02 0.03 0.04 0.05 0 10203040 output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs = 10, 9, 8, 7, 6, 5 v v gs gate-to-source voltage (v) drain current (a) i d t c = 125 c 55 c gate-to-source voltage (v) q g total gate charge (nc) v ds drain-to-source voltage (v) c capacitance (pf) v gs c rss c oss c iss v ds = 15 v i d = 6.9 a on-resistance ( r ds(on) ) i d drain current (a) capacitance on-resistance vs. junction temperature v gs = 10 v i d = 6.9 a t j junction temperature ( c) (normalized) on-resistance ( r ds(on) ) v gs = 10 v v gs = 4.5 v 3 v 25 c 4 v
SI4542DY vishay siliconix www.vishay.com faxback 408-970-5600 2-4 document number: 70666 s-56944erev. d, 23-nov-98

0 5 10 15 20 25 30 0.01 0.10 1.00 10.00 1 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 power (w) 1.0 0.8 0.6 0.4 0.2 0.0 0.2 0.4 50 25 0 25 50 75 100 125 150 0 0.02 0.04 0.06 0.08 0.10 0246810 source-drain diode forward voltage on-resistance vs. gate-to-source voltage threshold voltage single pulse power normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) 2 1 0.1 0.01 10 4 10 3 10 2 10 1 1 normalized effective transient thermal impedance 30 on-resistance ( r ds(on) ) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s t j temperature ( c) time (sec) variance (v) v gs(th) 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 i d = 6.9 a 10 1. duty cycle, d = 2. per unit base = r thja = 62.5 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm i d = 250 a 30 20 40 t j = 150 c t j = 25 c t c = 25 c single pulse
SI4542DY vishay siliconix document number: 70666 s-56944erev. d, 23-nov-98 www.vishay.com faxback 408-970-5600 2-5

0 8 16 24 32 40 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 2 4 6 8 10 0 7 14 21 28 35 0.5 0.75 1.00 1.25 1.50 1.75 50 25 0 25 50 75 100 125 150 0 0.02 0.04 0.06 0.08 0.10 0 8 16 24 32 40 0 800 1600 2400 3200 0 6 12 18 24 30 0 8 16 24 32 40 012345 output characteristics gate charge on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs = 10 thru 5 v v gs gate-to-source voltage (v) drain current (a) i d t c = 55 c 125 c gate-to-source voltage (v) q g total gate charge (nc) v ds drain-to-source voltage (v) c capacitance (pf) v gs c rss c oss c iss v ds = 15 v i d = 6.1 a on-resistance ( r ds(on) ) i d drain current (a) capacitance on-resistance vs. junction temperature v gs = 10 v i d = 6.1 a t j junction temperature ( c) (normalized) on-resistance ( r ds(on) ) v gs = 10 v v gs = 4.5 v 25 c 4 v 2, 1 v 3 v
SI4542DY vishay siliconix www.vishay.com faxback 408-970-5600 2-6 document number: 70666 s-56944erev. d, 23-nov-98

0 5 10 15 20 25 30 0.01 0.10 1.00 10.00 source-drain diode forward voltage on-resistance vs. gate-to-source voltage threshold voltage single pulse power normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance on-resistance ( r ds(on) ) v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s t j temperature ( c) time (sec) power (w) 0 0.04 0.08 0.12 0.16 0.20 0246810 0.4 0.2 0.0 0.2 0.4 0.6 0.8 50 25 0 25 50 75 100 125 150 i d = 6.1 a i d = 250 a variance (v) v gs(th) 40 10 1 0 0.3 0.6 0.9 1.2 1.5 2 1 0.1 0.01 10 4 10 3 10 2 10 1 11030 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r thja = 62.5 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm t j = 150 c t j = 25 c

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